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| S T S 8201 S amHop Microelectronics C orp. J an. 03 2006 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S ( mW ) Max ID 5A R DS (ON) S uper high dense cell design for low R DS (ON). 27 @ V G S = 4.0V 40 @ V G S = 2.5V R ugged and reliable. S urface Mount P ackage. E S D P rotected. D1 D2 S OT26 Top View S1 D1/D2 S2 1 2 3 6 5 4 G1 D1/D2 G2 G1 G2 S1 S2 ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ TJ=25 C -P ulsed b S ymbol VDS VGS ID IDM IS PD TJ, TS TG Limit 20 12 5 20 1.25 1.25 -55 to 150 Unit V V A A A W C Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 100 C /W 1 S T S 8201 E LE CTR ICAL CHAR ACTE R IS TICS (TA = 25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) R DS (ON) gFS CISS COSS CRSS c S ymbol Condition VGS = 0V, ID = 250uA VDS = 16V, VGS = 0V VGS = 12V,VDS = 0V VDS = VGS, ID = 250uA VGS = 4.0V, ID = 5A VGS =2.5V, ID = 3A VDS = 5V, ID =5A Min Typ C Max Unit 20 1 10 0.5 0.8 22 30 19 720 195 147 1.5 27 40 V uA uA V m ohm m ohm ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance Forward Transconductance S PF PF PF DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Transfer Capacitance VDS =8V, VGS = 0V f =1.0MHZ S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd VDD = 10V, ID = 1A, VGEN = 4.0V, R GE N= 10 ohm 34 68 104 43 12 ns ns ns ns nC nC nC VDS =10V, ID = 5A, VGS =4.0V 2.3 5.5 2 S T S 8201 E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted) Parameter Diode Forward Voltage S ymbol VSD Condition VGS = 0 V, Is = 1.25A Min Typ Max Unit 0.8 1.2 V DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Notes a.Surface Mounted on FR 4 Board, t <=10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 15 V G S =4V 12 12 V G S =2V V G S =2.5V 15 ID, Drain C urrent(A) 9 ID, Drain C urrent (A) 9 6 -55 C 3 0 T j=125 C 0 0.5 1.0 25 C 1.5 2.0 2.5 3.0 6 3 0 V G S =1.5V 0 0.5 1 1.5 2 2.5 3 V DS , Drain-to-S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 60 50 F igure 2. Trans fer C haracteris tics 1.8 R DS (ON), On-R es is tance Normalized 1.6 1.4 V G S =2.5V ID=3A V G S =4V ID=5A R DS (on) (m W) 40 30 20 10 0 V G S =2.5V 1.2 V G S =4V 1.0 0.8 1 3 6 9 12 15 0 25 50 75 100 125 150 T j( C ) ID, Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage 3 F igure 4. On-R es is tance Variation with Drain C urrent and Temperature S T S 8201 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 V DS =V G S ID=250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ID=250uA 6 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 60 F igure 6. B reakdown V oltage V ariation with T emperature 15.0 ID=5A Is , S ource-drain current (A) 50 12.0 9.0 6.0 125 C R DS (on) (m W) 40 30 20 10 0 125 C 75 C 25 C 3.0 75 C 25 C 0 2 2.5 3 3.5 4 1.0 0 0.4 0.8 1.2 1.6 2.0 V G S , G ate-S ource Voltage (V ) V S D, B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 4 S T S 8201 900 V G S , G ate to S ource V oltage (V ) 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 VDS =10V ID=5A 750 C is s C , C apacitance (pF ) 600 450 300 150 0 C rs s C os s 6 V DS , Drain-to S ource Voltage (V ) Qg, T otal G ate C harge (nC ) F igure 9. C apacitance F igure 10. G ate C harge 600 S witching T ime (ns ) ID, Drain C urrent (A) 80 10 R DS 100 60 10 T D (o ff) Tr Tf T D (on) (O N )L im i t 10 ms 10 0m 1 DC s 1s 1 1 V DS =10V ,ID=1A VGS= 4 V 0.1 0.03 VGS =4V S ingle P ulse T A=25 C 0.1 1 10 30 50 6 10 60 100 300 600 R g, G ate R es is tance (W) V DS , Drain-S ource V oltage (V ) F igure 11.s witching characteris tics F igure 12. Maximum S afe O perating Area 5 S T S 8201 V DD ton toff tr 90% 5 VG S R GE N V IN D G RL V OUT td(on) V OUT td(off) 90% 10% tf 10% INVE R TE D 90% S V IN 50% 10% 50% P ULS E WIDTH F igure 11. S witching T es t C ircuit 10 F igure 12. S witching Waveforms Normalized Transient Thermal Resistance 1 0.5 0.2 P DM t1 on 0.1 0.05 0.1 t2 0.01 0.00001 0.02 0.01 Single Pulse 0.0001 0.001 0.01 0.1 1 10 1. 2. 3. 4. R thJ A (t)=r (t) * R thJ A R thJ A=S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 100 1000 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 6 S T S 8201 PA C K A G E O U T L I N E D I M E N S I O N S SOT26 7 S T S 8201 SOT26 Tape and Reel Data SOT26 Carrier Tape SOT26 Reel 8 |
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